stp11nb40 stP11NB40FP n - chann el 400v - 0.48 w - 1 0.7a - to-220/ to -220fp powerm esh ? mo sfet n typ ical r ds(on) = 0.48 w n ext rem ely high dv/dt capabilit y n 100% avala nch e test ed n very low intri nsic capa cita nce s n gate char ge min imize d des cri pti on usin g t he late st high voltage me sh overlay ? proce ss, stmic roele ctron ics has designe d an adva nced famil y of power mosf ets with outst andin g perform ances. the new patent pendin g strip layout coup led with the comp any's proprietar y edge terminat ion structur e, gives the low est rds(on ) per area, except ional avalanc he and dv/dt capabi lities and unrivall ed gate charg e and switchi ng char acteri stics . app licat io ns n high curre nt , high speed swit ch ing n swit ch mod e po we r suppli es ( smp s ) n dc-a c con ver ter s for weldin g equipme nt and unint err upti ble power supplies and mot or drive ? inte rnal schem atic diagra m september 1998 to-22 0 to-22 0fp 1 2 3 1 2 3 abso lut e max imum rati ngs s y mb ol p a r a m e t e r v a l ue u n it s t p 1 1 nb4 0 s t p 1 1 nb 40f p v ds dr ai n - so ur c e v o lt a ge ( v gs =0 ) 4 0 0 v v dgr d r a i n- g at e v olt age ( r gs =2 0 k w ) 40 0 v v gs g a t e -so u rc e vo l t a g e 30 v i d d ra i n c u rre n t (co n t i n u o u s ) a t t c =2 5 o c 10. 7 6. 0 a i d d ra i n c u rre n t (co n t i n u o u s ) a t t c =1 0 0 o c6 . 7 3 . 8 a i dm ( ? ) d r a in c ur r en t ( pu l s ed) 42. 8 4 2. 8 a p to t t o ta l d i s s i p a ti o n a t t c =2 5 o c 125 40 w d e ra t i n g f a ct or 1 . 0 0 . 3 2 w / o c dv / dt ( 1 ) p eak dio de r ec ov e ry v olt age s l op e 4. 5 4. 5 v / ns v is o i n su l a t io n w i t h st a n d v o lt a g e (d c ) ? 20 00 v t st g s t or age t e m pe r at ur e - 65 t o 1 50 o c t j m ax . o p er a t ing j unc t i o n t e m pe r at u r e 1 50 o c ( ? ) p ulse width limited by safe operating area ( 1 )i sd 10.7a, di/dt 200 a/ m s, v dd v (br)dss ,t j t jmax t ype v dss r d s ( on) i d st p1 1 n b4 0 st p1 1 n b4 0 f p 400 v 400 v <0 . 5 5 w <0 . 5 5 w 10 . 7 a 6. 0 a 1/9 http://
the rma l data to- 2 2 0 to- 2 2 0 fp r t h j - case t he r m a l r es i s t an c e j unc t i on- c as e m ax 1. 0 3. 1 2 o c/w r th j - a m b r t h c- si nk t l t he r m a l r es is t a n c e j unc ti on- am b i en t m a x t h er m a l r e s is t a nc e c a s e- s i n k t y p m a x i m u m l e a d t em per at u r e f o r s o ld er ing p ur p o s e 62 . 5 0. 5 30 0 o c/ w o c/ w o c aval anc he cha ract er istics sy mb o l p ara met e r m ax v a l u e u n i t i ar a v a l an c h e c u r r ent , r e pet it iv e o r n o t - r e pet it iv e (p u l se w i d t h l im i t e d b y t j ma x) 10. 7 a e as si n g l e pu l s e a va la n c h e en e r g y ( s t a rt in g t j =2 5 o c, i d =i ar ,v dd =5 0 v ) 530 m j ele ctr ical char act eris tics (t case =2 5 o c unless otherwise specified) off sy m b o l pa r a m e t e r te s t c o n d it ions m i n. t y p. m a x . u n it v (b r ) d s s dr ain- s o u rc e b r eak d o wn v o lt age i d =2 5 0 m av gs =0 400 v i ds s z e r o g a t e vo l t a g e dr ain c u rr ent ( v gs =0 ) v ds =m a x r a ti n g v ds = m a x r a ti n g t c =1 2 5 o c 1 50 m a m a i gs s g a t e - b ody le ak a g e cur r en t ( v ds =0 ) v gs = 30 v 10 0 n a on ( * ) sy m b o l pa r a m e t e r te s t c o n d it ions m i n. t y p. m a x . u n it v gs ( t h ) ga t e th r e s h o l d vo l t a g e v ds =v gs i d = 250 m a 345 v r d s ( on) s t at i c d r ai n - s o u r c e o n res i s t anc e v gs =1 0 v i d = 5 .3 a 0 .4 8 0 .5 5 w i d( o n ) o n s t at e d ra in cu r r ent v ds >i d( o n ) xr d s ( o n ) ma x v gs =1 0 v 10. 7 a dyna m ic sy m b o l pa r a m e t e r te s t c o n d it ions m i n. t y p. m a x . u n it g fs ( * )f o r w a r d t r ans c ond uc t anc e v ds >i d( o n ) xr d s ( o n ) ma x i d =5 . 3 a 5 6 . 5 s c is s c os s c rs s i n p u t c ap ac i t an c e o u t put ca pac it a n c e r e v e rs e t ra n s f e r c a pac it a n c e v ds =2 5 v f = 1 m h z v gs = 0 12 50 21 0 22 1 625 284 30 pf pf pf stp11n b40 /fp 2/9
ele ctr ical char act eris tics (continue d) swi tch ing on s y m b o l p a r a m e t e r te s t c o n d it ions m i n. t y p. m a x . u n it t d( on) t r tu r n - o n ti m e ri s e t i m e v dd = 200 v i d =5 . 3 a r g =4 . 7 w v gs =1 0 v (se e t e st ci rcu i t , f i g u re 3 ) 17 10 25 15 ns ns q g q gs q gd t o t a l g a t e c har ge g at e- s our ce cha r ge g a t e -d ra i n c h a rg e v dd = 320 v i d = 10. 7 a v gs =1 0 v 2 9 10 . 6 11 . 8 41 nc nc nc swi tch ing off sy m b o l pa r a m e t e r te s t c o n d it ions m i n. t y p. m a x . u n it t r ( v o ff) t f t c o f f -vo l t a g e r i se t i me fa l l ti m e cr os s - ov er t i m e v dd = 320 v i d = 10. 7 a r g =4 . 7 w v gs =1 0 v (se e t e st ci rcu i t , f i g u re 5 ) 10 10 17 14 14 25 ns ns ns sou rce drain diode sy m b o l pa r a m e t e r te s t c o n d it ions m i n. t y p. m a x . u n it i sd i sd m ( ? ) so u rce -d ra i n c u rr e n t so u rce -d ra i n c u rr e n t (p u l se d ) 10. 7 42. 8 a a v sd ( * ) f or war d o n v olt age i sd =1 0 . 7 a v gs =0 1 . 6 v t rr q rr i rr m rev er s e r ec o v er y ti m e rev er s e r ec o v er y cha r ge rev er s e r ec o v er y cur r en t i sd = 10. 7 a di /d t = 10 0 a / m s v dd = 100 v t j =1 5 0 o c (se e t e st ci rcu i t , f i g u re 5 ) 40 0 3. 4 17 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating are a safe operating area for to-22 0 safe operating area for to-22 0fp s tp11n b40 /fp 3/9
therm al impe dance for to-220 outp ut charact eris tic s trans condu ctance therm al impe dance forto-22 0fp trans fer charac ter isti cs static drain-source on resistance stp11n b40 /fp 4/9
gate charge vs gate -so urce voltage norma liz ed gate thresh old voltage vs tem perature sourc e-dra in diode forwar d charact erist ics capacitanc e variation s normalized on resistance vs temperature s tp11n b40 /fp 5/9
fig . 1: unclam ped inductive load test circuit fig . 3: switchi ng times test circu its f or resi stive load fig. 2: uncl amp ed inductive waveform fig. 4: gate charge test circ uit fig. 5: test cir cuit for inductiv e load swit ching and diode recovery tim es stp11n b40 /fp 6/9
dim. mm inch min. ty p. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia . f1 l5 l4 h2 l9 f2 g1 to-220 mecha nical data p011c s tp11n b40 /fp 7/9
dim. mm inch min. ty p. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 3 3.2 0.118 0.126 l2 a b d e h g l6 ? f l3 g1 123 f2 f1 l7 l4 to-220fp mechanica l data stp11n b40 /fp 8/9
info rmatio n furnishe d is believe d to b e accurate and reliab le. however, s tm icroe lectron ics assume s no respon sibil ity for the consequ ences of use of such inform ation nor for any in fringeme nt of p atent s or o ther righ ts of th ird pa rties which m ay re sult fro m it s use . no lice nse i s gra nted by im plicatio n or oth erw ise u nder any patent or pa tent r ight s of stmicroe lectro nic s. s pecifica tion m ention ed in thi s publication are sub ject to c hange witho ut notice. this publication superse des and re place s all in form ation previous ly supplied. stmic roelectron ics products are not authorize d for us e as critical comp onents in life support d evice s or sys tems without express written approval of stmicr oele ctroni cs. t he st lo go is a registered trademark of stmicroelectronics ? 1998 stmicroelectronics printed in italy all rights re served stmicroelectronics group of companies australia - brazil - can ada - china - fran ce - germany - italy - japan - kore a - malaysia - m alta - mexico - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - th ailand - un ited kingdom - u.s.a. . s tp11n b40 /fp 9/9
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